NXP Semiconductors
PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
P PP
I PP
T j
T amb
T stg
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
8/20 μ s pulse
8/20 μ s pulse
[1][2]
[1][2]
-
-
-
? 65
? 65
35
2.5
150
+150
+150
W
A
° C
° C
° C
[1]
[2]
Non-repetitive current pulse 8/20 μ s exponentially decay waveform according to IEC 61000-4-5;
see Figure 1 .
Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 7.
ESD maximum ratings
Symbol
Parameter
Conditions
Min
Max
Unit
ESD
electrostatic discharge
IEC 61000-4-2
[1][2]
-
20
kV
capability
(contact discharge)
HBM MIL-STD883
-
10
kV
[1]
[2]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2 .
Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 8.
Standard
ESD standards compliance
Conditions
PESD5V0L6UAS_US_3
IEC 61000-4-2, level 4 (ESD); see Figure 2
HBM MIL-STD883, class 3
> 15 kV (air); > 8 kV (contact)
> 4 kV
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 August 2009
3 of 14
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